研究了退火温度对电子束蒸发制备的锗薄膜光学性能和表面结构的影响规律.在硅基底上制备了厚度约850 nm的Ge薄膜,分别在350、400、......

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TiO2,which is a widely used support [1] and is known in many cases to enhance the activity due to active phase-support i......

The origin of surface engineering of solids is to properly control the crystal growth process during carious chemical re......

ZnO 材料的广泛研究需要对其生长机制做深入讨论,ZnO 是一种典型的极性晶体,这种极性对材料性质与生长特性有显著影响[1,2];这里我......

利用北京同步辐射装置漫散射实验站的五圆衍射仪，建立了掠入射Ｘ射线衍射实验方法。对Ｓｉ表面生长的Ｇｅ／Ｓｉ量子点及其在Ｓｉ表层产生的应变进行了成......

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